1N5712 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SMALL SIGNAL SCHOTTKY DIODES

1N5712
SMALL SIGNAL SCHOTTKY DIODES
Features
! Metal-to-silicon junction
! High breakdown voltage
! Low turn-on voltage
! ^{Ultrafast switching speed}
Mechanical Data
! Case: DO-35, glass case
! _{Polarity: Color band denotes cathode}
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in millimeters
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Forw ard continuous current
Junction and storage temperature range
Maximumlead temperature for soldering during 10S at 4mmfromcase
Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Characteristic
Symbols
Reverse breakdown voltage @ I_R=10 A
Leakage current
@ VR=16V
Forw ard voltage drop @ IF=1mA
Test pulse: tp 300 s <2% IF=35mA
Junction capacitance @ VR=0V,f=1MHz
Thermal resistance
V_R
I_R
V_F
C_J
R_θJA
Symbols
Value
Unit
V_RRM
20.0
V
P_tot
430.0
mW
I_FSM
35.0
mA
T_J/T_STG
c-55 ---+ 150
T_L
230
Min.
Typ.
Max.
Unit
20.0
V
150
nA
0.41
V
1.0
2
pF
400
K/W
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