1N4448WS-V Datasheet, PDF (1/2 Pages) Vishay Siliconix – Small Signal Fast Switching Diode

1N4448WS-V
150mA Surface Mount Small Signal Fast Switching Diode
Features
· These diodes are also available in other
case styles including the DO35 case
with the type designation 1N4448, the
MiniMELF case with the type designa-
tion LL4448, and the SOT23 case with the type
designation IMBD4448-V
· _{Silicon epitaxial planar diode}
· _{Fast switching diodes}
· _{Lead (Pb)-free component}
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· _{Case: SOD323 plastic case}
· Weight: approx. 4.3 mg
· _{Packaging Codes/Options:}
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
C
H
B
A
M
K
J
L
SOD-323
Dim Min Max
A
0.25 0.35
B
1.20 1.40
C
2.30 2.70
H
1.60 1.80
J
0.00 0.10
K
1.0
1.1
L
0.20 0.40
M 0.10 0.15
α
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Test condition
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Power dissipation
f ≥ 50 Hz
t < 1 s and T_j = 25 °C
Parameter
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
Rectification efficiency
Test condition
I_F = 5 mA
I_F = 100 mA
V_R = 20 V
V_R = 75 V
V_R = 20 V, T_j = 150 °C
V_F = V_R = 0 V
I_F = 10 mA, I_R = 1 mA, V_R = 6 V,
R_L = 100 Ω
f = 100 MHz, V_RF = 2 V
Symbol
V_R
V_RRM
I_F(AV)
I_FSM
P_tot
Symbol
Min
V_F
620
V_F
I_R
I_R
I_R
C_D
t_rr
ην
0.45
Note:
1) _{Valid provided that electrodes are kept at ambient temperature.}
Value
75
100
150¹⁾
350
200¹⁾
Typ.
Unit
V
V
mA
Max
720
1000
25
5
50
4
4
mA
mW
Unit
mV
mV
nA
µA
µA
pF
ns
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