1N4151WS Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT FAST SWITCHING DIODE

1N4151WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
! Silicon Epitaxial Planar Diode
! Fast switching diode
Mechanical Data
! Case: SOD-323, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.004 grams (approx.)
! Marking: A5
A
SOD-323
C
Dim Min
Max
D
A
2.30
2.70
B
B
1.75 1.95
C
1.15 1.35
E
D
0.25 0.35
G
E
0.05 0.15
G
0.70
0.95
H
0.30
—
All Dimensions in mm
H
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Test condition
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
f ≥ 50 Hz
t < 1 s and T_j = 25 °C
Power dissipation
1)_{Valid provided that electrodes are kept at ambient temperature.}
Symbol
V_R
V_RM
I_F(AV)
I_FSM
P_tot
Thermal CharacteristicsT_amb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Test condition
Junction temperature
Storage temperature range
1) _{Valid provided that electrodes are kept at ambient temperature.}
Symbol
R_thJA
T_j
T_stg
Electrical Characteristics T_amb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
Rectification efficiency
Test condition
I_F = 50 mA
V_R = 50 V
V_R = 20 V, T_j = 150 °C
I_R = 5 µA (pulsed)
V_F = V_R = 0 V
I_F = 10 mA to I_R = 10 mA
to I_R = 1 mA
I_F = 10 mA to I_R = 1 mA,
V_R = 6 V, R_L = 100 Ω
f = 100 MHz, V_RF = 2 V
Symbol
V_F
I_R
I_R
V_(BR)
t_rr
t_rr
ην
Min.
75
0.45
Value
50
75
150¹⁾
500
410¹⁾
Value
450¹⁾
150
- 65 to + 150
Typ.
1 of 2
Unit
V
V
mA
mA
mW
Unit
°C/W
°C
°C
Max.
Unit
1
V
50
nA
50
µA
V
2
pF
4
ns
2
ns