1N4151WS-V Datasheet, PDF (1/2 Pages) Vishay Siliconix – Small Signal Fast Switching Diode

1N4151WS-V
150mA Surface Mount Small Signal Fast Switching Diode
Features
· Silicon Epitaxial Planar Diode
· Fast switching diode
· _{This diode is also available in other}
case styles including the DO35 case with the type
designation 1N4151, and the MiniMELF case with
the type designation LL4151.
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· _{Case: SOD323 plastic case}
· Weight: approx. 5.0 mg
· _{Packaging Codes/Options:}
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
C
H
B
A
M
K
J
L
SOD-323
Dim Min Max
A
0.25 0.35
B
1.20 1.40
C
2.30 2.70
H
1.60 1.80
J
0.00 0.10
K
1.0 1.1
L
0.20 0.40
M 0.10 0.15
α
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
Power dissipation
Parameter
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
Rectification efficiency
Test condition
T_amb = 25 °C and f ≥ 50 Hz
t < 1 s and T_j = 25 °C
T_amb = 25 °C
Test condition
I_F = 50 mA
V_R = 50 V
V_R = 20 V, T_j = 150 °C
I_R = 5 µA (pulsed)
V_F = V_R = 0 V
I_F = 10 mA to I_R = 10 mA
to I_R = 1 mA
I_F = 10 mA to I_R = 1 mA,
V_R = 6 V, R_L = 100 Ω
f = 100 MHz, V_RF = 2 V
1)_{Valid provided that electrodes are kept at ambient temperature.}
Symbol
V_R
V_RM
I_F(AV)
I_FSM
P_tot
Symbol
Min
V_F
I_R
I_R
V_(BR)R
75
t_rr
t_rr
ην
0.45
Value
50
75
150¹⁾
500
410¹⁾
Typ.
Unit
V
V
mA
mA
mW
Max
Unit
1.0
V
50
nA
50
µA
V
2
pF
4
ns
2
ns
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