1N4151W Datasheet, PDF (1/1 Pages) General Semiconductor – SMALL SIGNAL DIODES

1N4150W - 1N4151W
SURFACE MOUNT FAST SWITCHING DIODE
Features
! High Conductance
! Fast Switching Speed
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose Switching Application
B
C
E
Mechanical Data
! Case: SOD-123FL




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! Terminals : Plated axial leads,
D
H
! solderable per MIL-STD-750,Method 2026
! Polarity : Color band denotes cathode end
L
! Mounting Position : Any
! Weight:0.0007 ounce, 0.02 grams
E
A
SOD-123FL
Dim Min Max Typ
A 3.58 3.72 3.65
B 2.72 2.78 2.75
C 1.77 1.83 1.80
D 1.02 1.08 1.05
E 0.097 1.03 1.00
H 0.13 0.17 0.15
L 0.53 0.57 0.55
All Dimensions in mm
Maximum Ratings @T_A=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
R
JA
Tj, TSTG
Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Symbol
Forward Voltage Drop (Note 4)
VFM
Peak Reverse Leakage Current
@ VR = 50V
IRM
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)
Cj
Reverse Recovery Time (Note 2, 3)
trr
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100
.
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100
.
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA
1N4150W
50
1N4151W
75
50
35
400
300
200
150
4.0
2.0
1.0
0.5
410
500
300
-65 to +150
1N4150W
1N4151W
1.0
100
50
2.5
2.0
4.0
2.0
Unit
V
V
V
mA
mA
A
mW
K/W
°C
Unit
V
nA
pF
nS