1N4150 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes"

1N4150
200mA Axial Leaded Fast Switching Diode
Features
· High switching speed: max. 4 ns
· Continuous reverse voltage:max. 50 V
· Repetitive peak reverse voltage:max. 75 V
· Repetitive peak forward current: max. 600 mA
Pb / RoHS Free
Mechanical Data
· Case: DO-35 Glass Case
· Weight: approx. 0.13g
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Surge Forward Current at t = 1s , Tj = 25°C
Maximum Junction Temperature
Storage Temperature Range
Parameter
Reverse Current
Symbol
I_R
Forward Voltage
V_F
Diode Capacitance
Cd
Reverse Recovery Time
Trr
Symbol
V_RRM
V_RM
I_F
P_D
I_FRM
I_FSM
T_J
T_S
Test Condition
V_R = 50 V
V_R = 50 V , Tj = 150 °C
I_F = 100 mA
I_F = 200 mA
f = 1MHz ; V_R = 0
I_F = 10 mA to 200 mA
to I_R = 10 mA to 200 mA;
R_L = 100 Ω ; measured
at I_R = 0.1x I_F
Value
75
50
200
500
600
0.5
200
-65 to + 200
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
0.1
100
0.92
1.0
2.5
-
-
4
Unit
V
V
mA
mW
mA
A
°C
°C
Unit
µA
µA
V
pF
ns
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