1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4148 / 1N4448
150mA Axial Leaded Fast Switching Diode
Features
· Fast Switching Speed
· General Purpose Rectification
· Silicon Epitaxial Planar Construction
A
B
A
Mechanical Data
· Case: DO-35
· Leads: Solderable per MIL-STD-202,
Method 208
· Polarity: Cathode Band
· Marking: Type Number
· Weight: 0.13 grams (approx.)
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Characteristic
Maximum Forward Voltage
1N4148
1N4448
1N4448
Symbol
VRM
V_RRM
V_RWM
V_R
VR(RMS)
IFM
I_O
IFSM
P_d
R_qJA
Tj , TSTG
Symbol
Min
¾
V_FM
0.62
¾
Maximum Peak Reverse Current
I_RM
¾
Capacitance
Reverse Recovery Time
Cj
¾
trr
¾
1N4148
1N4448
Unit
100
V
75
V
53
V
300
500
mA
150
mA
1.0
2.0
A
500
mW
1.68
mW/°C
300
K/W
-65 to +175
°C
Max
Unit
Test Condition
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
I_F = 10mA
V
I_F = 5.0mA
I_F = 100mA
mA
VR = 75V
mA
VR = 70V, Tj = 150°C
mA
V_R = 20V, T_j = 150°C
nA
V_R = 20V
pF
V_R = 0, f = 1.0MHz
ns
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
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