1N17 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 - 40V
CURRENT: 1.0 A
Features
! Metal-Semiconductor junction with guard ring
! Epitaxial construction
! Low forward voltage drop,low switching losses
! High surge capability
! Foruse inlowvoltage,high frequencyinvertersfree
! ^{wheeling,and polarity protection applications}
! ^{The plastic material carries U/L recognition 94V-0}
Mechanical Data
! Case:JEDEC R-1 molded plastic
! Terminals: Axial lead ,solderable per
! MIL- STD-202 Method 208
! Polarity: Color band denotes cathode
! Weight:0.007 ounces,0.20 grams
1N17 - 1N19
SCHOTTKY BARRIER RECTIFIER DIODES
R-1
0.099 (2.51)
0.095 (2.42)
0.024 (0.6)
0.020 (0.5)
1.00 (25.4)
MIN.
0.138 (3.5)
0.114 (2.9)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
1N17
1N18
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=70
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A
V_F
20
14
20
0.45
0.75
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
30
21
30
1.0
25.0
0.55
0.875
1.0
10.0
110
50
- 55 ---- + 125
- 55 ---- + 150
1N19
40
28
40
0.60
0.90
Unit
V
V
V
A
A
V
mA
pF
/W
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