1F10F Datasheet, PDF (1/2 Pages) Summit Microelectronics, Inc. – FAST RECOVER Y RECTIFIER DIODES

VOLTAGE RANGE: 1000 - 18 00V
CURRENT: 1.0 A
Features
! Fast switching
! Diffused junction
! Low leakage
! Low forward voltage drop
! High current capability
! Easily cleaned with alcohol,Isopropanol and
! ^{similar solvents}
Mechanical Data
! Case: JEDEC R--1,molded plastic
! _{Polarity: Color band denotes cathode}
! Weight: 0.007ounces, 0.20 grams
! Mounting position: Any
1F10F - 1F18F
FAST RECOVERY RECTIFIER DIODES
R -1
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{1A10F 1A12F 1A14F 1A15F 1A16F 1A18F} UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 1000 1200 1400 1500 1600 1800
V
V_RMS 700 840 980 1050 1120 1260
V
V_DC 1000 1200 1400 1500 1600 1800
V
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
1.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
30.0
A
superimposed on rated load T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
V_F
1.3
1.8
V
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
5.0
100.0
μA
Maximum reverse recovery time (NOTE1)
t_rr
300
ns
Typical junction capacitance
(NOTE2)
C_J
15
pF
Operating junction temperature range
T_J
-55 ---- + 150
Storage temperature range
T_STG
-55 ---- + 150
NOTE: 1. Rev erse recov ery test conditions:I_F=0.5A,I_R=-1.0A,I_RR=-0.25A.
2. Mersured at 1MH_Z and applied rev erse v oltage of 4.0V.
1 of 2
www.sunmate.tw