11EQS03 Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SCHOTTKY BARRIER RECTIFIER DIODES

11EQS03 - 11EQS10
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 30 - 100V
CURRENT: 1.0 A
R-1
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
0.102 (2.6)
0.091 (2.3)
DIA.
! For Use in Low Voltage, High Frequency






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Protection Applications
1.0 (25.4)
MIN.
0.140(3.50)
0.114(2.90)
Mechanical Data
! Case: R-1 molded plastic body
! ^{Terminals: Plated axial leads, solderable}
per MIL-STD-750,
! _{Method 2026}
! Polarity: Color band denotes cathode end
! Mounting Position: Any
! Weight:0.007 ounce, 0.20 grams
0.025 (0.60)
0.021 (0.50)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol 11EQS03
11EQS04
11EQS06
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
30
40
60
VR
RMS Reverse Voltage
VR(RMS)
21
28
42
Average Rectified Output Current @T_L = 100°C
(Note 1)
IO
1.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
40
(JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
0.50
110
0.70
0.5
10
80
Typical Thermal Resistance (Note 1)
R
JL
R
JA
15
50
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
11EQS10
100
70
0.85
Unit
V
V
A
A
V
mA
pF
°C/W
°C
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