10JDA10 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – DIODE - 1A 100V TJ = 150C

10JDA10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V
CURRENT: 1.0 A
Features
! Miniature Size
! Low Forward Voltage drop
! Low Reverse Leakage Current
! High Surge Capability
Mechanical Data
! Case: D O - 4 1
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
10JDA10
Unit
Repetitive Peak Reverse Voltage
V RRM
100
V
50Hz
Ta=29°C *1
1.0
Average Rectified Output Current
IO
Half Sine Wave
Tl=126 °C
Resistive Load _{(Tl: Lead Temperature)}
1.0
A
RMS Forward Current
I F(RMS)
1.57
A
Surge Forward Current
I FSM
50Hz Half Sine Wave,1cycle,
Non-repetitive
45
A
Operating JunctionTemperature Range
T jw
- 40 to + 150
°C
Storage Temperature Range
T stg
- 40 to + 150
°C
Electrical Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
I RM Tj= 25 °C, VRM= VRRM
VFM Tj= 25 °C, IFM = 1.0A
Rth(j-a) Junction to Ambient *1
Rth(j-l) Junction to Lead
Min. Typ. Max. Unit
-
-
10 µA
-
- 1.0 V
-
-
-
-
120
23
°C/W
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