10EDB10 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – DIODE - 1A 100V TJ = 150C

10EDB10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V
CURRENT: 1.0 A
Features
! Miniature Size
! Low Forward Voltage drop
! Low Reverse Leakage Current
! _{High Surge Capability}
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Repetitive Peak Reverse Voltage
Average Rectified Output Current
50Hz Half Sine Wave
Resistive Load
Ta=39 °C *1
Ta=26 _{°C *2}
Symbol
V_RRM
IO
10EDB10
100
1.0
0.9
RMS Forward Current
Surge Forward Current
50Hz Half Sine Wave,1cycle,
Non-repetitive
Surge Forward Current
I_F(RMS)
I _FSM
1.57
45
Operating JunctionTemperature Range
T _jw
- 40 to + 150
Storage Temperature Range
T _stg
- 40 to + 150
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
I _RM
V_FM
Rth(j-a)
Tj= 25 _° C, VRM_{= VRRM}
Tj= 25 °C, IFM _{= 1.0A}
Junction to _{P.C. Board mounted*1}
Ambient
Without Fin *2
*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)
*2: Without Fin or P.C. Board mounted
Min. ^Typ.
-
-
-
-
-
-
-
-
Unit
V
A
A
A
°C
°C
Max.
10
1.0
110
140
Unit
µA
V
°C/W
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