10EDA10 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – DIODE - 1A 100V TJ = 150C

10EDA10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V
CURRENT: 1.0 A
Features
! Miniature Size
! Low Forward Voltage drop
! Low Reverse Leakage Current
! _{High Surge Capability}
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Average Rectified Output Current
50Hz Half Sine Wave
Resistive Load
Ta=39 °C *1
RMS Forward Current
Surge Forward Current
50Hz Half Sine Wave,1cycle,
Non-repetitive
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V_RRM
IO
I_F(RMS)
I _FSM
T _jw
T _stg
10EDA10
100
1.0
1.57
45
- 40 to + 150
- 40 to + 150
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
Min.
I_RM Tj= 25 _° C, V_{RM= VRRM}
-
V_FM Tj= 25 °C, IFM _{= 1.0A}
-
Rth(j-a) ^{Junction to}
Ambient
P.C. Board mounted*1
Without Fin * 2
-
1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)
2: Without Fin or P.C. Board mounted
Typ.
-
-
-
Unit
V
A
A
A
°C
°C
Max.
10
1.0
110
140
Unit
µA
V
°C/W
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