XTNI30W Datasheet, PDF (1/3 Pages) SunLED Corporation – Low power consumption

Features
● Radial / Through hole package
● Reliable & robust
● Low power consumption
● Available on tape and reel
● RoHS Compliant
Part Number: XTNI30W
T-1 (3mm) INFRARED EMITTING DIODE
Package Schematics
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Specifications are subject to change without notice.
Absolute Maximum Ratings
(TA=25°C)
TNI
(GaAs)
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
50
mA
Forward Current (Peak)
1/10 Duty Cycle
0.1ms Pulse Width
iFS
1200
mA
Power Dissipation
PD
80
mW
Operating Temperature
Storage Temperature
TA
-40 ~ +85
°C
Tstg -40 ~ +85
Lead Solder Temperature
[2mm Below Package Base]
260°C For 3 Seconds
Lead Solder Temperature
[5mm Below Package Base]
260°C For 5 Seconds
A Relative Humidity between 40% and 60% is recommended in
ESD-protected work areas to reduce static build up during assembly
process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033)
Operating Characteristics
(TA=25°C)
Forward Voltage (Typ.)
(IF=20mA)
VF
Forward Voltage (Max.)
(IF=20mA)
VF
Reverse Current (Max.)
(VR=5V)
IR
Wavelength of Peak
Emission CIE127-2007* (Typ.)
λP
(IF=20mA)
Spectral Line Full Width
At Half-Maximum (Typ.)
△λ
(IF=20mA)
Capacitance (Typ.)
(VF=0V, f=1MHz)
C
TNI
(GaAs)
1.2
1.6
10
940*
Unit
V
V
uA
nm
50
nm
90
pF
Part
Number
XTNI30W
Emitting
Material
GaAs
Lens-color
Water Clear
Radiant Intensity
CIE127-2007*
(Po=mW/sr)
@20mA
min.
typ.
8
11
3*
7*
Radiant Intensity
CIE127-2007*
(Po=mW/sr)
@50mA
Wavelength
CIE127-2007*
nm
λP
min.
typ.
18
31
8*
14*
940*
Viewing
Angle
2θ 1/2
50°
*Radiant intensity value and wavelength are in accordance with CIE127-2007 standards.
Oct 11,2016
XDSA2672 V9-X Layout: Maggie L.
P. 1/3