S9518 Datasheet, PDF (5/8 Pages) Summit Microelectronics, Inc. – Nonvolatile DACPOT Electronic Potentiometer With Debounced Push Button Interface

S9518
DAC DC ELECTRICAL CHARACTERISTICS
VDD = +2.7V to +5.5V, VrefH = VDD, VrefL = 0V, TA = -40°C to +85°C, unless specified otherwise
Symbol Parameter
Conditions
Min.
Typ.
Max. Units
Accuracy INL
Integral Non-Linearity
ILOAD = 100µA,
-
0.5
±1
LSB
DNL
Differential Non-Linearity ILOAD = 100µA,
-
Guaranteed but not tested
0.1
±0.5 LSB
References VH
VrefH Input Voltage
VrefL
-
VDD
V
VL
VrefL Input Voltage
Gnd
-
VrefH
V
RIN
VrefH to VrefL Resistance
-
38k
-
Ω
TCRIN
Temperature Coefficient
of RIN
VrefH to VrefL
-
600
- ppm/°C
Analog
GEFS
Full-Scale Gain Error
DATA = FF
±1
LSB
Output
VOUTZS Zero-Scale Output Voltage DATA = 00
0
20
mV
TCVOUT VOUT Temperature
Coefficient
VDD = +5, ILOAD = 50µA,
VrefH = +5V, VrefL = 0V
-
Guaranteed but not tested
-
50 µV/°C
IL
Amplifier Output Load Current
-200
+1000 µA
ROUT Amplifier Output Resistance ILOAD = 100µA VDD = +5V
-
10
Ω
VDD = +3V
-
20
Ω
PSRR Power Supply Rejection ILOAD = 10µA
-
-
1
LSB/V
eN
Amplifier Output Noise
f = 1kHz, VDD = +5V
-
90
- nV/ HZ
THD
Total Harmonic Distortion VIN = 1V rms, f = 1kHz
-
0.08
-
%
BW
Bandwidth - 3dB
VIN = 100mV rms
-
300
-
kHz
2017 PGM T3.4
RELIABILITY CHARACTERISTICS
Symbol Parameter
Min
Max
VZAP
ILTH
TDR
NEND
ESD Susceptibility
Latch-Up
Data Retention
Endurance
2000
100
100
1,000,000
Unit
V
mA
Years
Stores
Test Method
MS-883, TM 3015
JEDEC Standard 17
MS-883, TM 1008
MS-883, TM 1033
2017 PGM T4.0
2017-04 4/24/99
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