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| S9318 Datasheet, PDF (4/6 Pages) Summit Microelectronics, Inc. – Nonvolatile DACPOT™ Electronic Potentiometer With Up/Down Counter Interface | |||
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RELIABILITY CHARACTERISTICS
Symbol Parameter
Min
Max
VZAP
ILTH
TDR
NEND
ESD Susceptibility
Latch-Up
Data Retention
Endurance
2000
100
100
1,000,000
Unit
V
mA
Years
Stores
S9318
Test Method
MS-883, TM 3015
JEDEC Standard 17
MS-883, TM 1008
MS-883, TM 1033
2016 PGM T2.0
DC ELECTRICAL CHARACTERISTICS VDD = +2.7V to +5.5V, VH = VDD, VL = 0V, Unless otherwise specified
Symbol
Parameter
Conditions
Min
Max
Units
IDD
Supply Current
during store, note 1
CS = VIL
1.2
mA
ISB
Supply Standby Current
CS = VIH
200
µA
IIH
Input Leakage Current
VIN = VDD
10
µA
IIL
Input Leakage Current, note 2
VIN = 0V
-25
µA
VIH
High Level Input Voltage
2
VDD
V
VIL
Low Level Input Voltage
0
0.8
V
Notes:
2016 PGM T4.3
1. IDD is the supply current drawn while the EEPROM is being updated. IDD does not include the current that flows through the Reference
resistor chain.
2. CS, UP/DN and INC have internal pull-up resistors of approximately 200kâ¦. When the input is pulled to ground the resulting output
current will be VDD/200kâ¦.
2016-04 4/24/99
4
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