STM8S005K6T6C Datasheet, PDF (90/103 Pages) STMicroelectronics – Value line, 16 MHz STM8S 8-bit MCU, 32 Kbytes Flash

Electrical characteristics
STM8S005K6 STM8S005C6
9.3.12.1 Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
• FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
9.3.12.2
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• ^{Corrupted program counter}
• ^{Unexpected reset}
• ^{Critical data corruption (control registers...)}
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Symbol
VFESD
Table 46: EMS data
Parameter
Conditions
Voltage limits to be applied on
any I/O pin to induce a
functional disturbance
VDD = 5 V, TA = 25 °C, fMASTER = 16 MHz,
conforming to IEC 1000-4-2
Level/ class
2/B ⁽¹⁾
VEFTB
Fast transient voltage burst
limits to be applied through 100
pF on VDD and VSS pins to
induce a functional disturbance
VDD= 5 V, TA = 25 °C ,fMASTER = 16 MHz,conforming
to IEC 1000-4-4
4/A ⁽¹⁾
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