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| VND5T050AKTR-E Datasheet, PDF (9/32 Pages) STMicroelectronics – Double channel high-side driver with analog current sense for 24 V automotive applications | |||
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VND5T050AK-E
Electrical specifications
2.3
Electrical characteristics
8 V < VCC < 36 V; -40°C < Tj < 150°C, unless otherwise specified.
Table 5.
Symbol
Power section
Parameter
Test conditions
Min. Typ. Max. Unit
VCC
VUSD
VUSDhyst
Operating supply voltage
Undervoltage shutdown
Undervoltage shutdown
hysteresis
RON
Vclamp
IS
IL(off)
VF
On-state resistance(1)
Clamp voltage
Supply current
Off-state output current
Output - VCC diode
voltage
IOUT = 2 A; Tj = 25°C
IOUT = 2 A; Tj = 150°C
IS = 20 mA
Off-state; VCC = 24 V; Tj = 25°C;
VIN = VOUT = VSENSE = 0 V
On-state; VCC = 24 V; VIN = 5 V;
IOUT = 0 A
VIN = VOUT = 0 V; VCC = 24 V;
Tj = 25°C
VIN = VOUT = 0 V; VCC = 24 V;
Tj = 125°C
-IOUT = 2 A; Tj = 150°C
8 24 36 V
3.5 5 V
0.5
V
50
mΩ
100
58 64 70 V
2(2) 5(2) µA
4.2 6 mA
0 0.01 3
µA
0
5
0.7 V
1. For each channel
2. PowerMOS leakage included
Table 6. Switching (VCC = 24 V; Tj = 25 °C)
Symbol
Parameter
Test conditions
td(on)
Turn-on delay time
td(off)
Turn-off delay time
dVOUT/dt(on) Turn-on voltage slope
dVOUT/dt(off) Turn-off voltage slope
WON
Switching energy losses
during twon
WOFF
Switching energy losses
during twoff
RL= 12 Ω
RL= 12 Ω
RL= 12 Ω
RL= 12 Ω
RL= 12 Ω
RL= 12 Ω
Min. Typ. Max. Unit
30
40
0.7 V/us
0.8 V/us
µs
µs
V/µs
V/µs
0.5
mJ
0.3
mJ
Doc ID 022694 Rev. 3
9/32
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