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| VND5E025LK-E Datasheet, PDF (9/37 Pages) STMicroelectronics – Double channel high side driver with analog current sense for automotive applications | |||
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VND5E025LK-E
Electrical specification
2.3
Electrical characteristics
Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.
Symbol
Power section
Parameter
Test conditions
Min. Typ. Max. Unit
VCC
Operating supply
voltage
4.5 13 28
VUSD Undervoltage shutdown
VUSDhyst
Undervoltage shutdown
hysteresis
3.5 4.5 V
0.5
RON
On state resistance (1)
IOUT = 3A; Tj = 25°C
IOUT = 3A; Tj = 150°C
25
50 mï
IOUT = 3A; VCC = 5V; Tj = 25°C
35
Vclamp Clamp voltage
IS = 20 mA
41 46 52 V
IS Supply current
Off State; VCC = 13V; Tj = 25°C;
VIN = VOUT = VSENSE = VCSD = 0V
On State; VCC = 13V; VIN = 5V;
IOUT = 0A
2 (2) 5 (2) µA
3
6 mA
IL(off1)
Off state output
current (1)
VIN = VOUT = 0V; VCC = 13V;
Tj = 25°C
VIN = VOUT = 0V; VCC = 13V;
Tj = 125°C
0 0.01 3
µA
0
5
VF
Output
voltage
-(1V) CC
diode
-IOUT = 4 A; Tj = 150°C
0.7 V
1. For each channel.
2. PowerMOS leakage included.
Table 6. Switching (VCC = 13V; Tj = 25°C)
Symbol
Parameter
Test conditions Min.
Typ.
Max. Unit
td(on)
td(off)
(dVOUT/dt)on
(dVOUT/dt)off
WON
WOFF
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Switching energy losses
during tWON
Switching energy losses
during tWOFF
RL = 4.3 ïï
(see Figure 6)
RL = 4.3 ï
RL = 4.3 ïï
(see Figure 6)
20
40
See Figure 27
See Figure 28
0.6
0.35
µs
V/µs
mJ
9/37
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