STB200NF03_07 Datasheet, PDF (9/18 Pages) STMicroelectronics – N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
P_D(AVE) = 0.5 * (1.3 * BV_DSS * I_AV)
E_AS(AR) = P_D(AVE) * t_AV
Where:
I_AV is the Allowable Current in Avalanche
P_D(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
t_AV is the Time in Avalanche
To de rate above 25 ^oC, at fixed I_AV, the following equation must be applied:
I_AV = 2 * (T_jmax - T_CASE)/ (1.3 * BV_DSS * Z_th)
Where:
Z_th = K * R_th is the value coming from Normalized Thermal Response at fixed pulse width
equal to T_AV.
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