STM8S003F3 Datasheet, PDF (86/104 Pages) STMicroelectronics – Extended instruction set

Electrical characteristics
STM8S003F3 STM8S003K3
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. Emission tests conform to the IEC
61967-2 standard for test software, board layout and pin loading.
Table 49. EMI data
Conditions
Symbol Parameter
General conditions
Monitored
frequency band
S_EMI
Peak level
EMI level
V_DD = 5 V
T_A = 25 °C
LQFP32 package
conforming to IEC
61967-2
1. Data based on characterization results.
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
-
Max f_HSE/f_CPU(1)
16 MHz/ 16 MHz/
8 MHz 16 MHz
Unit
5
5
4
5
dBµV
5
5
2.5
2.5
-
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, DLU and LU) using specific measurement methods,
the product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (one positive then one negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: the Human Body Model (HBM). This test conforms to the JESD22-
A114A/A115A standard. For more details, refer to the application note AN1181.
Table 50. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value⁽¹⁾
Unit
V_ESD(HBM)
Electrostatic discharge voltage
(Human body model)
T_A = 25°C, conforming to
JESD22-A114
A
V_ESD(CDM)
Electrostatic discharge voltage
(Charge device model)
T_A= 25°C, conforming to
JESD22-C101
IV
4000
V
1000
V
1. Data based on characterization results.
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