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| STM8L151X4 Datasheet, PDF (85/142 Pages) STMicroelectronics – Advanced STM8 core | |||
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STM8L151x4/6, STM8L152x4/6
Electrical parameters
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Figure 18. LSE oscillator circuit diagram
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Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
Table 33. HSI oscillator characteristics
Symbol
Parameter
Conditions(1)
Min
Typ Max Unit
fHSI
Frequency
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
TRIM
tsu(HSI)
IDD(HSI)
HSI user trimming
step(3)
HSI oscillator setup
time (wakeup time)
HSI oscillator power
consumption
VDD = 3.0 V
VDD = 3.0 V, TA = 25 °C
VDD = 3.0 V, 0 °C â¤TA ⤠55 °C
VDD = 3.0 V, -10 °C â¤TA ⤠70 °C
VDD = 3.0 V, -10 °C â¤TA ⤠85 °C
VDD = 3.0 V, -10 °C â¤TA ⤠125 °C
1.65 V â¤VDD ⤠3.6 V,
-40 °C â¤TA ⤠125 °C
Trimming code â multiple of 16
Trimming code = multiple of 16
-
-
-
-1 (2)
-1.5
-2
-2.5
-4.5
-4.5
-
-
-
-
16
-
MHz
-
1(2)
%
-
1.5
%
-
2
%
-
2
%
-
2
%
-
3
%
0.4
0.7
%
± 1.5 %
3.7
6(4)
µs
100 140(4) µA
1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2. Tested in production.
3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16
(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 âSTM8L15x internal RC oscillator calibrationâ application note for
more details.
4. Guaranteed by design.
DocID15962 Rev 15
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