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| STM32F205VGT6 Datasheet, PDF (85/163 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera | |||
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STM32F205xx, STM32F207xx
Electrical characteristics
Table 33. Flash memory programming(1)
Symbol
Parameter
Conditions
Min(2) Typ Max(2) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
Program/erase parallelism
(PSIZE) = x 8
-
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
16 100(3) µs
400 800
300 600 ms
Program/erase parallelism
(PSIZE) = x 32
-
250 500
Program/erase parallelism
(PSIZE) = x 8
-
1200 2400
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
700 1400 ms
Program/erase parallelism
(PSIZE) = x 32
-
550 1100
Program/erase parallelism
(PSIZE) = x 8
-
2
4
tERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
Program/erase parallelism
(PSIZE) = x 32
-
Program/erase parallelism
(PSIZE) = x 8
-
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 16
-
Program/erase parallelism
(PSIZE) = x 32
-
1.3 2.6 s
1
2
16 TBD
11 TBD s
8 TBD
Vprog Programming voltage
32-bit program operation 2.7
-
3.6 V
16-bit program operation 2.1
-
3.6 V
8-bit program operation
1.8
-
3.6 V
1. TBD stands for âto be definedâ.
2. Based on characterization, not tested in production.
3. The maximum programming time is measured after 100K erase operations.
Doc ID 15818 Rev 7
85/163
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