VNB35NV04TR-E Datasheet, PDF (8/19 Pages) STMicroelectronics – “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Source-Drain Diode Forward Characteristics
Vsd (mV)
950
900
Vin=0V
850
800
750
700
Static Drain Source On Resistance
Rds(on) (mOhm)
50
Vin=2.5V
40
Tj=-40ºC
Tj=25ºC
30
Tj=150ºC
20
650
0
5
10
15
20
25
30
35
Id (A)
PowerSO-10 Static Drain-Source On resistance Vs.
Input Voltage
10
0
1
2
3
4
5
6
Id (A)
D2PAK, TO-220 & TO-247 Static Drain-Source On
resistance Vs. Input Voltage
Rds(on) (mOhm)
27.5
25
22.5
Id=15A
Id=7.5A
20
17.5
15
12.5
10
Id=15A
Id=7.5A
Id=15A
Id=7.5A
Tj=150°C
Tj=25°C
7.5
Tj=-40°C
5
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Vin (V)
PowerSO-10 Static Drain-Source On Resistance
Vs. Id
Rds(on) (mOhm)
30
25
Vin=5V
20
15
Tj=150ºC
10
Tj=25ºC
Tj=-40ºC
5
0
0
5
10
15
20
25
30
35
Id (A)
Rds(on) (mOhm)
30
25
Tj=150ºC
20
Id=15A
Id=7.5A
15
Tj=25ºC
Id=15A
10
Id=7.5A
Id=15A
Tj=-40ºC
Id=7.5A
5
0
2.5
3
3.5
4
4.5
5
5.5
6
6.5
Vin (V)
D2PAK, TO-220 & TO-247 Static Drain-Source On
Resistance Vs. Id
Rds(on) (mOhm)
24
21
Tj=150ºC
18
15
12
9
6
Vin=5V
3
Tj=25ºC
Tj=-40ºC
0
0
4
8
12
16
20
24
28
32
Id (A)
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