TDA7851F Datasheet, PDF (8/18 Pages) STMicroelectronics – 4 48 W MOSFET quad bridge power amplifier

Electrical specifications
TDA7851F
Symbol
Table 4. Electrical characteristics (continued)
Parameter
Test condition
Min.
THD Distortion
e_No Output noise
P_o = 4 W
-
"A" Weighted
-
Bw = 20 Hz to 20 kHz
SVR Supply voltage rejection
f = 100 Hz; V_r = 1 Vrms
50
f_ch High cut-off frequency
P_O = 0.5W
100
R_i
Input Impedance
-
70
C_T Cross talk
f = 1 kHz P_O = 4 W
60
f = 10 kHz P_O = 4 W
V_St-By = 1.2 V
-
I_SB Standby current consumption
V_St-By = 0
-
I_pin5 Standby pin current
V_St-By = 1.2 V to 2.6 V
-
V_{SB out} Standby out threshold voltage
(Amp: ON)
2.6
V_{SB in} Standby in threshold voltage
(Amp: OFF)
-
A_M Mute attenuation
P_Oref = 4 W
80
V_{M out} Mute out threshold voltage
(Amp: Play)
2.6
V_{M in} Mute in threshold voltage
(Amp: Mute)
-
V_{AM in} V_S automute threshold
(Amp: Mute)
Att.  80 dB; P_Oref = 4 W
6.7
(Amp: Play)
Att. < 0.1 dB; P_O = 0.5 W
V_MUTE = 1.2 V
7
Ipin23 Muting pin current
(Sourced current)
V_MUTE = 2.6 V
-5
Offset detector
V_OFF Detected diff. output offset
V_ST-BY = 5 V
±1
V_{OFF_SAT} Off detector sat voltage
V_o > ±3 V, I_{off Det} = 1 mA
0 V < V_{off Det} < 18 V
-
V_{OFF_LK} Off detector leakage current
V_o < ±1 V
-
1. Saturated square wave output
Typ.
0.01
35
50
70
300
100
70
60
-
-
-
-
-
90
-
-
7
7.5
12
-
±2
0.2
0
Max.
0.05
100
-
-
130
-
-
20
10
±1
1.2
1.2
8
18
18
±3
0.4
15
Unit
%
μV
μV
dB
kHz
kΩ
dB
dB
μA
μA
μA
V
V
dB
V
V
V
V
μA
μA
V
V
μA
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DocID17714 Rev 4