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TDA7850A Datasheet, PDF (8/16 Pages) STMicroelectronics – 4 x 50 W MOSFET quad bridge power amplifier plus HSD
Electrical specifications
TDA7850A
Table 4.
Symbol
Electrical characteristics (continued)
(Refer to the test and application diagram, VS = 14.4V; RL = 4Ω; Rg = 600Ω; f = 1KHz;
Tamb = 25°C; unless otherwise specified).
Parameter
Test Condition
Min. Typ. Max. Unit
Po Output power
Po max. Max. output power(1)
THD Distortion
eNo Output noise
SVR
fch
Ri
Supply voltage rejection
High cut-off frequency
Input impedance
CT Cross talk
ISB St-By current consumption
Ipin5
VSB out
VSB in
AM
VM out
VM in
St-by pin current
St-By out threshold voltage
St-By in threshold voltage
Mute attenuation
Mute out threshold voltage
Mute in threshold voltage
VAM in VS automute threshold
Ipin23 Muting pin current
HSD section
VS = 13.2V; THD = 10%
VS = 13.2V; THD = 1%
VS = 14.4V; THD = 10%
VS = 14.4V; THD = 1%
VS = 14.4V; THD = 10%, 2Ω
VS = 14.4V; RL = 4Ω
VS = 14.4V; RL = 2Ω
Po = 4W
Po = 15W; RL = 2Ω
"A" Weighted
Bw = 20Hz to 20KHz
f = 100Hz; Vr = 1Vrms
PO = 0.5W
f = 1KHz PO = 4W
f = 10KHz PO = 4W
VSt-By = 1.5V
VSt-By = 0V
VSt-By = 1.5V to 3.5V
(Amp: ON)
(Amp: OFF)
POref = 4W
(Amp: Play)
(Amp: Mute)
(Amp: Mute)
Att ≥ 80dB; POref = 4W
(Amp: Play)
Att < 0.1dB; PO = 0.5W
VMUTE = 1.5V
(Sourced Current)
VMUTE = 3.5V
23
25
16
19
W
28
30
20
23
50
55
W
50
W
85
0.006 0.05
%
0.015 0.07
35
50
μV
50
70
50
75
dB
100 300
KHz
80 100 120 KΩ
60
70
-
dB
60
-
20
μA
10
±1
μA
2.75
V
1.5
V
80
90
dB
3.5
V
1.5
V
6.5
7
V
7.5
8
7
12
18
μA
-5
18
μA
Vdropout Dropout voltage
Iprot Current limits
IO = 0.35A; VS = 9 to 16V
0.25 0.6
V
400
800 mA
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