STP18N65M5 Datasheet, PDF (8/19 Pages) STMicroelectronics – N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

Electrical characteristics
STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.00
AM12471v1
ID = 250 µA
VD_S = VG_S
RDS(on)
(norm)
2.1
1.9
1.7
VG_S= 10V
ID= 17.5 A
AM12483v1
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Figure 16. Drain-source diode forward
characteristics
Figure 17. Normalized B_VDSS vs temperature
VSD
(V)
TJ=-50°C
1.2
1.0
AM05461v1
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
Figure 18. Switching losses vs gate resistance
(1)
E (μJ)
160
140
VDD=400V
VGS=10V
ID=9.5A
Eon
AM12485v1
120
100
80
60
Eoff
40
20
0
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode
RG(Ω)
8/19
Doc ID 022879 Rev 3