STF15N65M5 Datasheet, PDF (8/17 Pages) STMicroelectronics – N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET

Electrical characteristics
STF15N65M5, STFI15N65M5, STP15N65M5
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized B_VDSS vs temperature
VSD
(V)
TJ=-50°C
1.2
1.0
AM05461v1
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
Figure 16. Switching losses vs gate resistance
(1)
E (μJ)
120
VDD=400V
VGS=10V
ID=7A
100
Eon
AM15292v1
80
60
40
Eoff
20
0
0 10
20
30 40
1. Eon including reverse recovery of a SiC diode
50 RG(Ω)
8/17
Doc ID 022863 Rev 2