STB25N80K5 Datasheet, PDF (8/22 Pages) STMicroelectronics – N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK

Electrical characteristics
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
Figure 14. Capacitance variations
C
(pF)
AM15729v1
10000
Ciss
1000
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 15. Output capacitance stored energy
Eoss(µJ)
22
20
18
16
14
12
10
8
6
4
2
0
0
AM15730v1
100 200 300 400 500 600 700 800 VDS(V)
Figure 16. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
VGS=10V
ID=10A
AM15731v1
2
Figure 17. Source-drain diode forward
characteristics
VSD (V)
AM15732v1
1
TJ=50°C
0.9
1.5
0.8
TJ=25°C
1
0.7
0.5
0.6
TJ=150°C
0
-100 -50 0 50 100 150 TJ(°C)
0.5
0
5
10
15
20 ISD(A)
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DocID023466 Rev 2