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L9380_08 Datasheet, PDF (8/18 Pages) STMicroelectronics – Triple high-side MOSFET driver
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Electrical specifications
L9380
Table 5.
Symbol
Electrical characteristics (continued)
(7 V ≤ VS ≤ 18.5 V; -40° C ≤ TJ ≤ 150 °C, unless otherwise specified.)
Parameter
Test condition
Min. Typ. Max. Unit
ICP Charge pump current
VS = 12 V, VCP = 20 V, Tj ≥ 25 °C -70
VS = 12 V, VCP = 20 V, Tj < 25 °C -70
tCP Charging time
VCP = VS + 8 V CCP = 100 pF
VSCP off Overvoltage shut down
20
VSCP hys Overvoltage shut down hysteresis (1)
50
fCP Charge pump frequency (1)
100
Gate drivers
-45
µA
-38
µA
200
µs
30
V
200 1000 mV
250 400 KHz
IGSo Gate source current
VG = VS
-5
-3
-1
mA
IGSi Gate sink current
VG ≥ 0.8 V
1
3
5
mA
IGCP
Charge pump current on the gate VS = 12 V, VG = 20 V, Tj ≥ 25 °C
VS = 12V, VG = 20 V, Tj < 25 °C
-60
-60
-35
µA
-28
µA
Drain - source sensing
VPR Bias current programming voltage 10 µA ≤ IPR ≤ 100 µA; VD ≥ 4 V
1.8
2
2.2
V
ID Leak Drain pin leakage current
VS = 0 V; VD =14 V
0
5
A
ID Drain pin bias current
VS ≥ VD + 1 V; VD ≥ 5 V
0.9 IPR
1.1 IPR
ISmax Source pin input current
VS ≥ VD + 1 V; VD ≥ 7 V
10
60
A
VHYST Comparator hysteresis
20
mV
Timer
VTHi
VTLo
Timer threshold high
Timer threshold low
IT Timer current
Inputs
IN = 5 V; VT = 2 V
IN = 0 V; VS < VD;
VD ≥ 5 V; VT = 2 V
4
4.4 4.8
V
0.3 0.4 0.5
V
0.4 IPR
-0.6
IPR
0.6 IPR
-0.4
IPR
VLOW Input enable low voltage
VHIGH Input enable high voltage
VINhys Input enable hysteresis(1)
IIN Input source current
IEN Enable sink current
td Transfer time IN/ENABLE
1. Not measured guaranteed by design.
-0.3
1
V
3
7
V
50 200 500 mV
VIN ≤ 3 V
-30
VEN ≥ 1 V
5
VS = 14 V VG = VS; Open Gate
-5
μA
30
μA
2.5
µs
Function is given for supply voltage down to 5.5V.
Function means: the channels are controlled from the inputs, some other parameters may
exceed the limit. In this case the programming voltage and timer threshold will be lower. This
leads to a lower protection threshold and time.
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