STM32L162VC Datasheet, PDF (78/123 Pages) STMicroelectronics – Ultra-low-power platform

Electrical characteristics
STM32L162VC, STM32L162RC
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 39. EMI characteristics
Max vs. frequency range
Symbol Parameter
Conditions
Monitored
frequency band
4 MHz 16 MHz _{32 MHz}
voltage voltage ^voltage
Unit
range 3 range 2 ^{range 1}
V_DD = 3.3 V,
0.1 to 30 MHz
3
-6
-5
T_A = 25 °C,
30 to 130 MHz
18
4
-7 dBµV
S_EMI
Peak level _{LQFP100 package}
compliant with IEC ^{130 MHz to 1GHz}
15
5
-7
61967-2
SAE EMI Level
2.5
2
1
-
6.3.11
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114, ANSI/ESD STM5.3.1. standard.
Table 40. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value⁽¹⁾
Unit
Electrostatic
V_ESD(HBM) discharge voltage
(human body model)
T_A = +25 °C, conforming
to JESD22-A114
V_ESD(CDM)
Electrostatic
discharge voltage
(charge device model)
T_A = +25 °C, conforming
to ANSI/ESD STM5.3.1.
2
2000 V
C4
500
V
1. Guaranteed by characterization results.
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