STM32F318C8 Datasheet, PDF (73/125 Pages) STMicroelectronics – ARM-based Cortex-M4 32-bit MCU+FPU, 64 KB Flash, 16 KB SRAM, ADC, DAC, 3 COMP, Op-Amp, 1.8 V

STM32F318C8 STM32F318K8
Electrical characteristics
6.3.7
Internal clock source characteristics
The parameters given in Table 38 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 20.
High-speed internal (HSI) RC oscillator
Table 38. HSI oscillator characteristics⁽¹⁾
Symbol
Parameter
Conditions
Min Typ
f_HSI
Frequency
-
-
8
TRIM HSI user trimming step
-
-
-
DuCy_(HSI) Duty cycle
-
45⁽²⁾
-
T_A = -40 to
105°C
-2.8⁽³⁾
-
T_A = -10 to 85°C -1.9⁽³⁾
-
ACC_HSI
Accuracy of the HSI oscillator ^TA ^{= 0 to 85°C}
-1.9⁽³⁾
-
T_A = 0 to 70°C -1.3⁽³⁾
-
T_A = 0 to 55°C
-1⁽³⁾
-
T_A = 25°C⁽⁴⁾
-1
-
t_su(HSI) HSI oscillator startup time
-
1⁽²⁾
-
I_DDA(HSI)
HSI oscillator power
consumption
-
-
80
1. V_DDA = 3.3 V, T_A = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
4. Factory calibrated, parts not soldered.
Max
-
1⁽²⁾
55⁽²⁾
3.8⁽³⁾
2.3⁽³⁾
2⁽³⁾
2⁽³⁾
2⁽³⁾
1
2⁽²⁾
100⁽²⁾
Unit
MHz
%
%
%
µs
µA
Figure 17. HSI oscillator accuracy characterization results for soldered parts

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