M30L0R8000T0 Datasheet, PDF (73/83 Pages) STMicroelectronics – 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

M30L0R8000T0, M30L0R8000B0
Figure 24. Erase Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Write 70h
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
Read Status
Register
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
NO
SR7 = 1
} while (status_register.SR7== 0) ;
YES
NO
SR6 = 1
Erase Complete
Write FFh
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
YES
Write FFh
Read Data
Read data from another block
or
Program/Protection Register Program
or
Block Lock/Unlock/Lock-Down
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another block*/
Write D0h
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
Write 70h⁽¹⁾
Erase Continues with
Bank in Read Status
Register Mode
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
}
}
AI10116b
Note: The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
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