STM32F334X4 Datasheet, PDF (72/115 Pages) STMicroelectronics – ARMCortex-M4 32b MCU+FPU,up to 64KB Flash,16KB SRAM, 2 ADCs,3 DACs,3 comp.,op-amp, 217ps 10-ch (HRTIM1)

Electrical characteristics
STM32F334x4 STM32F334x6 STM32F334x8
6.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 47. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
V_ESD(HBM
)
Electrostatic discharge
voltage (human body model)
T_A = +25 °C,
conforming to JESD22-
A114
2
V_ESD(CD
Electrostatic discharge
voltage (charge device
M)
model)
T_A = +25 °C,
conforming to JESD22- II
C101
1. Data based on characterization results, not tested in production.
Maximum
value⁽¹⁾
2000
250
Unit
V
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 48. Electrical sensitivities
Symbol
Parameter
Conditions
LU
Static latch-up class T_A = +105 °C conforming to JESD78A
Class
II level A
6.3.13
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V_SS or
above V_DD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, to give an indication of the robustness of the microcontroller in cases
when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
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