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VNS14NV0413TR Datasheet, PDF (7/31 Pages) STMicroelectronics – "OMNIFET II" fully autoprotected Power MOSFET
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VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04
Electrical specification
2.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
SO-8
Value
Unit
DPAK IPAK D2PAK
Rthj-case Thermal resistance junction-case max
1.7
1.7
1.7
°C/W
Rthj-lead
Rthj-amb
Thermal resistance junction-lead max
Thermal resistance junction-ambient max
27
°C/W
90(1)
65(1)
102
52(1) °C/W
1. When mounted on a standard single-sided FR4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected to all DRAIN
pins. Horizontal mounting and no artificial air flow.
2.3
Electrical characteristics
-40 < Tj < 150 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test Conditions
Off
VCLAMP Drain-source clamp voltage
VCLTH
Drain-source clamp threshold
voltage
VINTH
IISS
Input threshold voltage
Supply current from input pin
VINCL Input-source clamp voltage
IDSS
Zero input voltage drain current
(VIN=0 V)
VIN=0 V; ID=7 A
VIN=0 V; ID=2 mA
VDS=VIN; ID=1 mA
VDS=0 V; VIN=5 V
IIN=1 mA
IIN=-1 mA
VDS=13 V; VIN=0 V; Tj=25 °C
VDS=25 V; VIN=0 V
On
RDS(on)
Static drain-source on resistance
Vin = 5 V ID = 7 A Tj = 25 °C
Vin = 5 V ID = 7 A
Dynamic (Tj=25°C, unless otherwise specified)
gfs (1)
Coss
Forward transconductance
Output capacitance
VDD = 13 V ID = 7 A
VDS = 13 V f = 1 MHz VIN = 0 V
Switching
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15 V ID = 7 A
Vgen = 5 V Rgen = RIN MIN =10 Ω
(see Figure 3)
Min Typ Max Unit
40
45 55 V
36
V
0.5
2.5 V
100 150 µA
6
6.8
8
V
-1.0
-0.3
30
µA
75
35
mΩ
70
18
S
400
pF
80 250 ns
350 1000 ns
450 1350 ns
150 500 ns
Doc ID 7393 Rev 9
7/31
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