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TS555 Datasheet, PDF (7/12 Pages) STMicroelectronics – LOW POWER SINGLE CMOS TIMER
TS555
STATIC ELECTRICAL CHARACTERISTICS
VCC = +12V, Tamb = +25°C, Reset to VCC (unless otherwise specified)
Symbol
Parameter
Min.
ICC
VCL
VDIS
IDIS
VOL
VOH
VTRIG
ITRIG
ITH
VRESET
IRESET
Supply Current (no load, High and Low States)
Tmin. ≤ Tamb ≤ Tmax.
Control Voltage Level
Tmin. ≤ Tamb ≤ Tmax.
Discharge Saturation Voltage (Idis = 80mA)
Tmin. ≤ Tamb ≤ Tmax.
Discharge Pin Leakage Current
Low Level Output Voltage (Isink = 50mA)
Tmin. ≤ Tamb ≤ Tmax.
High Level Output Voltage (Isource = -10mA)
Tmin. ≤ Tamb ≤ Tmax.
Trigger Voltage
Tmin. ≤ Tamb ≤ Tmax.
Trigger Current
Threshold Current
Reset Voltage
Tmin. ≤ Tamb ≤ Tmax.
Reset Current
7.4
7.3
10.5
10.5
3.2
3.1
0.4
0.3
DYNAMIC ELECTRICAL CHARACTERISTICS
VCC = +12V, Tamb = +25°C, Reset to VCC (unless otherwise specified)
Symbol
Parameter
Min.
Timing Accuracy (Monostable) 1)
R = 10kΩ, C = 0.1µF
VCC = +12V
Timing Shift with Supply Voltage Variations (Monostable) 1)
R = 10kΩ, C = 0.1µF,VCC = +5V ±1V
Timing Shift with Temperature
Tmin. ≤ Tamb ≤ Tmax., VCC = +5
fmax
Maximum Astable Frequency 2)
RA = 470Ω, RB = 200Ω, C = 200pF, VCC = +5V
Astable Frequency Accuracy 2)
RA =RB = 1kΩ to 100kΩ, C = 0.1µF, VCC = +12V
Timing Shift with Supply Voltage Variations (Astable mode)
RA =RB = 1kΩ to 100kΩ, C = 0.1µF, VCC = 5 to +12V
1. see figure 2
2. see figure 4
Typ.
170
8
0.09
1
1.2
11
4
10
10
1.1
10
Typ.
4
0.38
75
2.7
3
0.1
Max.
400
400
8.6
8.7
1.5
2.0
100
2
2.8
4.8
4.9
1.5
2.0
Max.
Unit
µA
V
V
nA
V
V
V
pA
pA
V
pA
Unit
%
%/V
ppm/°C
MHz
%
%/V
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