STW24NK55Z Datasheet, PDF (7/12 Pages) STMicroelectronics – N-channel 550 V - 0.18 Ω - 23 A - TO-247 Zener-protected SuperMESH™ Power MOSFET

STW24NK55Z
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V)
12
VDD=440V
ID=23A
10
VGS=10V
HV41800
8
6
4
2
0
0
50
100
150
Qg (nC)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Maximum avalanche energy vs
temperature
45EA0S
(mJ)
400
350
300
250
200
150
100
50
00
HV41780
30
60
90
120
150 ^{TJ (˚C)}
Figure 13. Source-drain diode forward
characteristics
1.19999VS7D
(V)
0.999919.07
0.799909.8
Tj = -50˚C
25˚C
HV41850
0.599909.68
150˚C
0.399909.49
0.199909.29
0.000000 ₀
5
10
15
20
ID(A)
7/12