PD55025-E_10 Datasheet, PDF (7/23 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD55025-E, PD55025S-E
Typical performance
Figure 7. Output power vs input power
Figure 8. Power gain vs. output power
45
40
35
30
25
20
15
10
5
0
0
Vdd = 13.8 V
Vdd = 12.5 V
f = 520 MHz
Idq = 200 m A
1
2
3
4
5
6
Pin (W )
18
16
14
12
10
8
6
4
2
0
0
480 MHz
520 MHz ^{500 MHz}
Vdd = 12.5 V
Idq = 200 m A
10
20
30
40
50
Pout (W )
Figure 9. Drain efficiency vs output power Figure 10. Input return loss vs output power
70
60
50
40
30
20
10
0
0
500 MHz
480, 520 MHz
Vdd = 12.5 V
Idq = 200 m A
10
20
30
40
50
Pout (W )
0
-5
-10
-15
-20
-25
-30
-35
-40
0
Vdd = 12.5 V
Idq = 200 m A
480 MHz
500 MHz
520 MHz
10
20
30
40
50
Pout (W )
Doc ID 12330 Rev 2
7/23