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STM8S903K3T6C Datasheet, PDF (67/116 Pages) STMicroelectronics – 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM,10-bit ADC, 2 timers, UART, SPI, I²C
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STM8S903K3 STM8S903F3
Electrical characteristics
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1= CL2 = C: Grounded external capacitance
gm >> gmcrit
10.3.4
Symbol
fHSI
ACCHSI
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Parameter
Frequency
Table 36: HSI oscillator characteristics
Conditions
Min
Typ
-
16
Accuracy of HSI User-trimmed with
oscillator
CLK_HSITRIMR register for
given VDD and TA
-
-
conditions(1)
Accuracy of HSI VDD = 5 V, TA = 25°C(2)
-1
-
oscillator (factory
calibrated)
VDD = 5 V,
25 °C ≤ TA ≤ 85 °C
-2.0
-
Max
-
Unit
MHz
1.0(3)
1
%
2.0
tsu(HSI)
IDD(HSI)
HSI oscillator
wakeup time
including
calibration
HSI oscillator
power
consumption
2.95 ≤ VDD≤ 5.5 V,
-40 °C ≤ TA ≤ 125 °C
-3.0(2)
-
3.0(2)
-
-
1.0(3)
μs
-
170
250(2)
μA
(1) Refer to application note.
(2) Data based on characterization results, not tested in production.
(3) Guaranteed by design, not tested in production.
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