STM32F401CB Datasheet, PDF (63/134 Pages) STMicroelectronics – Up to 81 I/O ports with interrupt capability

STM32F401xB STM32F401xC
Electrical characteristics
6.3.6
Table 19. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min Typ Max Unit
V_PDRhyst(2) PDR hysteresis
V_BOR1
Brownout level 1
threshold
Falling edge
Rising edge
-
40
- mV
2.13 2.19 2.24
2.23 2.29 2.33
V_BOR2
Brownout level 2
threshold
Falling edge
Rising edge
2.44 2.50 2.56
V
2.53 2.59 2.63
V_BOR3
Brownout level 3
threshold
V_BORhyst(2) BOR hysteresis
T_{RS(T2T)(E3)MPO POR reset timing}
Falling edge
Rising edge
2.75 2.83 2.88
2.85 2.92 2.97
-
100 -
mV
0.5 1.5 3.0 ms
I_RUSH(2)
InRush current on
voltage regulator power-
on (POR or wakeup from
Standby)
-
160 200 mA
E_RUSH(2)
InRush energy on
voltage regulator power-
on (POR or wakeup from
Standby)
V_DD = 1.7 V, T_A = 105 °C,
I_RUSH = 171 mA for 31 µs
-
- 5.4 µC
1. The product behavior is guaranteed by design down to the minimum V_POR/PDR value.
2. Guaranteed by design.
3.
The reset timing is measured from the power-on (POR
instruction is fetched by the user application code.
reset
or
wakeup
from
V_BAT)
to
the
instant
when
first
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 19: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.
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