M30l0R7000B0 Datasheet, PDF (62/83 Pages) STMicroelectronics – 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory

M30L0R7000T0, M30L0R7000B0
Table 33. CFI Query System Interface Information
Offset
Data
Description
01Bh
0017h
V_DD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
01Ch
0020h
V_DD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
01Dh
0085h
V_PP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
01Eh
0095h
V_PP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
01Fh
0004h _{Typical time-out per single byte/word program = 2}ⁿ _µs
020h
0009h _{Typical time-out for Buffer Program = 2}ⁿ _µs
021h
000Bh _{Typical time-out per individual block erase = 2}ⁿ _ms
022h
0000h _{Typical time-out for full chip erase = 2}ⁿ _ms
023h
0003h _{Maximum time-out for word program = 2}ⁿ _{times typical}
024h
0001h _{Maximum time-out for Buffer Program = 2}ⁿ _{times typical}
025h
0001h _{Maximum time-out per individual block erase = 2}ⁿ _{times typical}
026h
0000h _{Maximum time-out for chip erase = 2}ⁿ _{times typical}
Value
1.7V
2V
8.5V
9.5V
16µs
512µs
2s
NA
128µs
1024µs
4s
NA
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