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ULQ2001_08 Datasheet, PDF (6/14 Pages) STMicroelectronics – Seven Darlington array
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Electrical characteristics
4
Electrical characteristics
ULQ2001 - ULQ2003 - ULQ2004
Table 4.
Symbol
Electrical characteristics
(TJ = -40 to 105 °C for DIP16 unless otherwise specified)
(TJ = 25 to 105 °C for SO16 unless otherwise specified).
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX Output leakage current
VCE(SAT)
Collector-emitter saturation
voltage (Figure 5)
II(ON) Input current (Figure 6)
II(OFF) Input current (Figure 7)
VI(ON) Input voltage (Figure 8)
hFE
DC forward current gain
(Figure 5)
CI Input capacitance
tPLH Turn-on delay time
tPHL Turn-off delay time
IR
Clamp diode leakage current
(Figure 9)
VF
Clamp diode forward voltage
(Figure 10)
VCE = 50V, (Figure 3)
50
TJ = 105°C, VCE= 50V (Figure 3)
TJ = 105°C for ULQ2004, VCE= 50V,
VI = 1V (Figure 4)
100 µA
500
IC = 100mA, IB = 250µA
0.9 1.1
IC = 200mA, IB= 350µA
1.1 1.3
V
IC = 350mA, IB= 500µA
1.3 1.6
for ULQ2003, VI = 3.85V
0.93 1.35
for ULQ2004, VI = 5V
0.35 0.5 mA
for ULQ2004, VI = 12V
1 1.45
TJ = 105°C, IC = 500µA
50
65
µA
for ULQ2003
VCE= 2V, IC = 200mA
VCE= 2V, IC = 250mA
VCE= 2V, IC = 300mA
for ULQ2004
VCE= 2V, IC = 125mA
VCE= 2V, IC = 200mA
VCE= 2V, IC = 275mA
VCE= 2V, IC = 350mA
2.4
2.7
3
V
5
6
7
8
for ULQ2001, VCE = 2V,
IC = 350mA
1000
15 25 (1) pF
0.5 VI to 0.5VO
0.5 VI to 0.5VO
0.25 1 (1) µs
0.25 1 (1) µs
VR = 50V
TJ = 105°C, VR = 50V
50
µA
100
IF = 350mA
1.7 2
V
1. Guaranteed by design.
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