TIP120_08 Datasheet, PDF (6/13 Pages) STMicroelectronics – Complementary power Darlington transistors

Electrical characteristics
TIP120, TIP121, TIP122, TIP125, TIP126, TIP127
Figure 8. Base-emitter saturation voltage for Figure 9. Base-emitter saturation voltage for
NPN type
PNP type
V_BE(sat)
(V)
hFE= 250
2.0
AM00700v1
V_BE(sat)
(V)
hFE= 250
-2.0
AM03261v1
1.5
-1.5
1.0
0.5
0.1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
1
Ic(A)
-1.0
-0.5
-0.1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
-1
Ic(A)
Figure 10. Base-emitter on voltage for NPN
type
V_BE(on)
(V)
VCE= 3 V
2.0
AM03262v1
Figure 11. Base-emitter on voltage for PNP
type
V_BE(on)
(V)
AM03263v1
-2.0 ^{VCE= -3 V}
1.5
-1.5
1.0
0.5
0.1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
1
Ic(A)
-1.0
-0.5
- 0.1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
-1
Ic(A)
Figure 12. Switching time on resistive load for Figure 13. Switching time on resistive load for
NPN type (on)
PNP type (on)
t(ns)
Vcc= 30 V
hFE=250
Vbeoff= - 5 V
Ibon= - Iboff
AM03264v1
t(ns)
Vcc= -30 V
hFE=250
Vbeoff= 5 V
-Ibon= Iboff
AM03265v1
100
100
Delay time
Rise time
10
0 12 345
Ic(A)
Delay time
Rise time
10
0 -1 -2 -3 -4 -5
Ic(A)
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