STW12NK90Z Datasheet, PDF (6/14 Pages) STMicroelectronics – N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

Electrical characteristics
STW12NK90Z
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 11A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 10A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 50V, T_j = 25°C
Reverse recovery current (see Figure 15)
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 10A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 50V, T_j = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
728
7.8
21.6
964
11
23
Max. Unit
11
A
44
A
1.6 V
ns
µC
A
ns
µC
A
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