STP165N10F4 Datasheet, PDF (6/12 Pages) STMicroelectronics – Very low on-resistance

Electrical characteristics
STP165N10F4
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
ID
(A)
100
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
10
1
0.1
0.1
1
10
Tj=150°C
Tc=25°C
Single pulse
AM08651v1
100µs
1ms
10ms
100 VDS(V)
K
δ=0.5
280tok
0.2
0.1
10^-1
0.05
0.01
0.02
Zth=k Rthj-c
δ=tp/τ
Single pulse
10^-2
10^-5
10^-4
10^-3
tp
τ
10^-2
10^-1
tp(s)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID (A)
350
300
250
200
150
100
VGS=10V
AM08652v1
7V
6V
ID
(A)
300
250
200
150
5V
100
VDS=2V
50
4V
0
0
1
2
3
4 VDS(V)
50
0
0
2
4
6
8
AM08653v1
VGS(V)
Figure 6.
BVDSS
(norm)
Normalized B_VDSS vs temperature Figure 7.
ID=1mA
AM08654v1
RDS(on)
(mΩ)
Static drain-source on resistance
AM08655v1
VGS=10V
1.10
5.3
5.2
1.05
5.1
5.0
1.00
4.9
4.8
0.95
4.7
0.90
-75 -25 25 75 125 175 TJ(°C)
4.6
4.5
0 20 ^{40 60} 80 100 120 ID(A)
6/12
Doc ID 15781 Rev 2