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RT2904WH Datasheet, PDF (6/13 Pages) STMicroelectronics – RobuST low-power dual operational amplifier
Electrical characteristics
RT2904WH
Symbol
Table 3. VCC+ = 5V, VCC- = ground, Vo = 1.4 V, Tamb = 25 °C
(unless otherwise specified) (continued)
Parameter
Min. Typ.
Max.
Unit
Slew rate (unity gain)
SR
VCC+ = 15 V, Vi = 0.5 to 3 V, RL = 2 kΩ, CL = 100 pF,
Tmin ≤ Tamb ≤ Tmax
0.3 0.6
0.2
V/µs
GBP
Gain bandwidth product f = 100 kHz
VCC+ = 30 V, Vin = 10 mV, RL = 2 kΩ, CL = 100 pF
Tmin ≤ Tamb ≤ Tmax
0.7 1.1
0.45
MHz
THD
Total harmonic distortion
f = 1 kHz, AV = 20 dB, RL = 2 kΩ, Vo = 2 Vpp,
CL = 100 pF, VCC = 30 V
%
0.02
en
Equivalent input noise voltage, f = 1 kHz, RS = 100 Ω,
VCC = 30 V
55
nV/√ Hz
DVio Input offset voltage drift
7
30
µV/°C
DIio
VO1/VO2
Input offset current drift
Channel separation(3)
1 kHz ≤ f ≤ 20 kHz
10
300
120
pA/°C
dB
1. VO = 1.4 V, RS = 0 Ω, 5 V < VCC+ < 30 V, 0 V < Vic < (VCC+) - 1.5 V.
2. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of the output,
so there is no change in the loading charge on the input lines.
3. Due to the proximity of external components, ensure that stray capacitance does not cause coupling between these
external parts. Typically, this can be detected because this type of capacitance increases at higher frequencies.
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DocID026931 Rev 1