P010XX Datasheet, PDF (6/12 Pages) STMicroelectronics – Repetitive peak off-state voltage up to 600 V

Characteristics
P010xx
Figure 5. Average and DC on-state current
versus case temperature P010xxL
IT(AV)(A)
0.30
0.25
D.C.
0.20
α = 180°
0.15
0.10
0.05
Tcase(°C)
0.00
0
25
50
75
100
125
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
SOT23-3L
SOT-223
TO-92
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 7. Gate trigger, holding, and latching
currents with gate trigger voltage versus
junction temperature
IGT, VGT, IH, IL[T j] / IGT, VGT, iH, iL[T j=25 °C]
6.0
5.0
Relative variations
Typical values
4.0
3.0
IGT
2.0
IH and IL
(RGK =1 KΩ)
1.0
VGT
Tj(°C)
0.0
-40 -20
0
20
40
60
80
100 120 140
Figure 8. Relative variation of holding current
versus gate-cathode resistance
IH[RGK] / IH[RGK=1kΩ]
20
18
16
14
12
10
Typical values
8
6
4
2
0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
Figure 9. Relative variation of dV/dt immunity
versus gate-cathode resistance
dV/dt[RGK] / dV/dt[RGK=1kΩ]
10.0
Tj = 125°C
VD = 0.67 x VDRM
Figure 10. Relative variation of dV/dt immunity
versus gate-cathode capacitance
dV/dt[CGK] / dV/dt[RGK=1kΩ]
10
VD = 0.67 x VDRM
Tj = 125°C
RGK = 1kΩ
8
Typical values
1.0
0.1
0
RGK(kΩ)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
6
4
Typical values
2
CGK(nF)
0
0
1
2
3
4
5
6
7
6/12
DocID15197 Rev 2