HCC40208B Datasheet, PDF (6/13 Pages) STMicroelectronics – 4 x 4 MULTIPORT REGISTER

HCC/HCF40208B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Value
Symbol Parameter
V_I
V_O |I_O | V_{D D}
T _{Lo w}*
25°C
T _High*
Unit
(V) (V) (µA) (V) _{Min. Max. Min. Typ. Max. Min. Max.}
I_OL
Output
Sink
Current
0/ 5 0.4
HCC
Types
0/10
0.5
0/15 1.5
5 0.64
0.51 1
0.36
10 1.6
1.3 2.6
0.9
15 4.2
3.4 6.8
2.4
0/ 5 0.4
5 0.52
0.44 1
0.36
mA
HCF
Types
0/10
0.5
10 1.3
1.1 2.6
0.9
0/15 1.5
15 3.6
3.0 6.8
2.4
I _IH, I_IL
Input
Leakage
Current
HCC _0/18
Types
HCF
Types ^0/15
Any Input
18
15
± 0.1
± 0.3
±10^{– 5} ± 0.1
±10^{– 5} ± 0.3
±1
µA
±1
I_{O H},I_{O L}**
3-State
Output
Leakage
Current
HCC _0/18
Types
HCF _0/15
Types
0/18
0/15
18
± 0.4
±10^{– 4} ± 0.4
± 12
µA
15
± 1.0
±10^{– 4} ± 1.0
± 7.5
C_I Input Capacitance
Any Input
5 7.5
pF
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
** Forced output disable.
DYNAMIC ELECTRICAL CHARACTERISTICS (T _amb = 25°C, C_L = 50pF, R_L = 200kΩ,
typical temperature coefficient for all V_DD values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
Parameter
t _PHL,
t_PLH
Propagation Delay Time :
Clock to Write Enable to Q
Read or Write Address to Q
Test Conditions
V _{D D} (V)
5
10
15
5
Min.
V al ue
Typ.
360
140
100
300
Max.
720
280
200
600
10
120 240
t _PZH,
t_{P HZ}
3-state Disable Delay Time
t_PZL,
t_{PL Z}
3-State Disable Delay time
15
85 170
5
100 200
10
50 100
15
40 80
5
130 260
10
60 120
15
50 100
t _{T HL},
t_TLH
Output Transition Time
5
100 200
10
50 100
15
40 80
t_setup
Setup Time
Data to Clock t _{s (D)}
5
0 – 95
10
0 – 35
15
0 – 20
Write Enable to Clock t_{s( WE)}
5
250 125
10 100 50
15
70 35
Write Address to Clock t_{s (WA )}
5
250 125
10 100 50
15
70 35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
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