English
Language : 

74LCX07YMTR Datasheet, PDF (6/16 Pages) STMicroelectronics – Low-voltage CMOS hex buffer (open drain)
Electrical characteristics
4
Electrical characteristics
74LCX07
Table 6. DC specifications
Test condition
Value
Symbol
Parameter
VCC
(V)
-40 to 85 °C
Unit
Min.
Max.
VIH High level input voltage
VIL Low level input voltage
2.7 to 3.6
2.0
V
0.8
V
2.7 to 3.6
IO = 100 μA
0.2
VOL Low level output voltage
2.7
IO = 12 mA
IO = 16 mA
3.0
IO = 24 mA
0.4
V
0.4
0.55
II
Input leakage current
2.7 to 3.6
VI = 0 to 5.5 V
±5
μA
Ioff Power OFF leakage current
0
VI or VO = 5.5 V
10
μA
IOZ
High impedance output leakage
current
2.7 to 3.6
VI = VIH or VIL
VO = 0 to VCC
±5
μA
ICC Quiescent supply current
2.7 to 3.6
VI = VCC or GND
VI or VO = 3.6 to 5.5 V
10
μA
± 10
ΔICC I incr. per input
2.7 to 3.6
VIH = VCC - 0.6 V
500
μA
Table 7.
Dynamic switching characteristics
Test condition
Value
Symbol
Parameter
VCC
(V)
TA = 25 °C
Unit
Min. Typ. Max.
VOLP
VOLV
Dynamic low level quiet output(1)
3.3
VIL = 0 V
VIH = 3.3 V
0.8
V
-0.8
1. Number of outputs defined as “n”. Measured with “n-1” outputs switching from HIGH to LOW or LOW to HIGH. The
remaining output is measured in the LOW state.
6/16
Doc ID 6818 Rev 8