STM32L011X3 Datasheet, PDF (55/115 Pages) STMicroelectronics – Access line ultra-low-power 32-bit MCU ARM-based Cortex-M0+, up to 16KB Flash, 2KB SRAM, 512B EEPROM, ADC

Electrical characteristics
STM32L011x3/4
Table 24. Current consumption in Run mode, code with data processing running from RAM
Symbol
Parameter
Conditions
Range 3,
V_CORE=1.2 V,
VOS[1:0]=11
f_HSE = f_HCLK up to 16
MHz, included
f_HSE = f_HCLK/2 above
16 MHz
(PLL ON)⁽²⁾
Range 2,
V_CORE=1.5 ,V,
VOS[1:0]=10
I_DD (Run
from
RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
switched OFF
MSI clock
Range 1,
V_CORE=1.8 V,
VOS[1:0]=01
Range 3,
V_CORE=1.2 V,
VOS[1:0]=11
f_HCLK
Typ Max⁽¹⁾ Unit
1 MHz 115 140
2 MHz 205 240 µA
4 MHz 385 420
4 MHz 0.48 0.55
8 MHz 0.935 1.1
16 MHz 1.8
8 MHz 1.1
2
mA
1.4
16 MHz 2.1
2.5
32 MHz 4.5
4.9
65 kHz 22
38
524 kHz 67
91
µA
4.2 MHz 415 450
HSI16 clock source
(16 MHz)
Range 2,
V_CORE=1.5 V,
VOS[1:0]=10
Range 1,
V_CORE=1.8 V,
VOS[1:0]=01
16 MHz 1.95 2.2
mA
32 MHz 4.7
5.2
1. Guaranteed by characterization results at 125 °C, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).
Table 25. Current consumption in Run mode vs code type,
code with data processing running from RAM⁽¹⁾
Symbol
Parameter
Conditions
I_DD (Run
from
RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
switched OFF
f_HSE = f_HCLK up to 16
MHz, included,
f1_H6SME =Hzf_{H(CPLLKL/2OaNb)o(2}v₎e
Range 3,
V_CORE=1.2 V,
VOS[1:0]=11
Range 1,
V_CORE=1.8 V,
VOS[1:0]=01
Dhrystone
CoreMark
Fibonacci
while(1)
Dhrystone
CoreMark
Fibonacci
while(1)
f_HCLK
4 MHz
32 MHz
1. Guaranteed by characterization results, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).
3. CoreMark code is unable to run from RAM since the RAM size is only 2 Kbytes.
Typ Unit
385
-⁽³⁾
µA
350
340
4.5
-⁽³⁾
mA
4.2
3
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